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FDD3510H
Περιγραφή:
FDD3510H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Κατηγορία:
Ιδιαίτερος ημιαγωγός
Προδιαγραφές
Part Number:
FDD3510H
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
FDD3510H More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.21
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
260.37 mg
Rise Time:
3 ns
Resistance:
80 MΩ
Case/Package:
TO-252
Power Dissipation:
1.3 W
Number of Elements:
2
Max Power Dissipation:
1.3 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
80 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2848 In Stock
Applications:
Wireless infrastructure
Mobile phones
Height:
2.517 mm
Fall Time:
5 ns
Rds On Max:
80 mΩ
Schedule B:
8541290080
Input Capacitance:
800 pF
Number of Channels:
2
Turn-Off Delay Time:
25 ns
Max Operating Temperature:
150 °C
Drain to Source Resistance:
80 mΩ
Continuous Drain Current (ID):
2.8 A
Drain to Source Voltage (Vdss):
80 V
Αριθμό μοντέλου:
FDD3510H
Εισαγωγή
FDD3510H Overview\\\\nFDD3510H is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FDD3510H high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. FDD3510H is
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