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BF998E6327HTSA1
Περιγραφή:
BF998E6327HTSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IR (Infineon Technologies) stock available at Rozee
Κατηγορία:
Ιδιαίτερος ημιαγωγός
Προδιαγραφές
Part Number:
BF998E6327HTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BF998E6327HTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.49
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Packaging:
Tape & Reel
Case/Package:
SOT
Max Frequency:
1 GHz
Number of Pins:
4
Package Quantity:
3000
Power Dissipation:
200 mW
Number of Elements:
1
Max Power Dissipation:
200 mW
Min Operating Temperature:
-55 °C
Continuous Drain Current (ID):
30 mA
Drain to Source Voltage (Vdss):
12 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
2168 In Stock
Applications:
Motor drives
Grid infrastructure
Data storage
Width:
1.3 mm
Length:
2.9 mm
Schedule B:
8541210080
Noise Figure:
1.8 dB
Current Rating:
30 mA
Contact Plating:
Tin
Input Capacitance:
1.2 pF
Number of Channels:
1
Voltage Rating (DC):
12 V
Max Operating Temperature:
150 °C
Gate to Source Voltage (Vgs):
8 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
12 V
Αριθμό μοντέλου:
BF998E6327HTSA1
Εισαγωγή
BF998E6327HTSA1 Overview\\\\nBF998E6327HTSA1 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BF998E6327HTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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