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HN2C01FEYTE85LF
Περιγραφή:
HN2C01FEYTE85LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Κατηγορία:
Ιδιαίτερος ημιαγωγός
Προδιαγραφές
Part Number:
HN2C01FEYTE85LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN2C01FEYTE85LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.10
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
NPN
Case/Package:
SOT-563
Element Configuration:
Dual
Max Collector Current:
150 mA
Gain Bandwidth Product:
60 MHz
Collector Base Voltage (VCBO):
60 V
Collector Emitter Breakdown Voltage:
50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
8216 In Stock
Applications:
Grid infrastructure
Test & measurement
Power delivery
hFE Min:
120
Packaging:
Tape & Reel (TR)
Transition Frequency:
60 MHz
Max Breakdown Voltage:
50 V
Max Power Dissipation:
100 mW
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
250 mV
Collector Emitter Saturation Voltage:
100 mV
Αριθμό μοντέλου:
HN2C01FEYTE85LF
Εισαγωγή
HN2C01FEYTE85LF Overview\\\\nHN2C01FEYTE85LF is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN2C01FEYTE85LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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